sep.2000 cm a c d f b e t c measured point r 3 - m6 nuts r g l n m q e2 g1 e1 g2 e2 c1 c2e1 mp p m k(4 - mounting holes) tab #110, t = 0.5 j h h dimensions inches millimeters a 4.33 110.0 b 3.66 0.01 93.0 0.25 c 3.15 80.0 d 2.44 0.01 62.0 0.25 e 0.55 14.0 f 0.86 21.75 g 0.94 24.0 h 0.24 6.0 dimensions inches millimeters j 0.59 15.0 k 0.26 dia. 6.5 dia. l 1.14 +0.04/-0.02 29 +1.0/-0.5 m 0.71 18.0 n 0.33 8.5 p 0.28 7.0 q 0.83 21.0 r 0.98 25.0 description: mitsubishi igbt modules are de- signed for use in switching appli- cations. each module consists of two igbts in a half-bridge configu- ration with each transistor having a reverse-connected super-fast re- covery free-wheel diode. all com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ups u forklift ordering information: example: select the complete module number you desire from the table - i.e. CM350DU-5F is a 250v (v ces ), 350 ampere trench gate design dual igbt module. current rating v ces type amperes volts (x 50) cm 350 5 mitsubishi igbt modules CM350DU-5F high power switching use insulated type outline drawing and circuit diagram
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 250 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 350 amperes peak collector current i cm 700 amperes emitter current** (t c = 25 c) i e 350 amperes peak emitter current** i em 700* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 960 watts mounting torque, m6 main terminal C 1.96 ~ 2.94 n m mounting torque, m6 mounting C 1.96 ~ 2.94 n m weight C 520 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage current i ges v ge = v ces , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 35ma, v ce = 10v 3.0 4.0 5.0 volts collector-emitter saturation voltage v ce(sat) i c = 350a, v ge = 10v, t j = 25 c C 1.2 1.7 volts i c = 350a, v ge = 10v, t j = 125 c C 1.10 C volts total gate charge q g v cc = 100v, i c = 350a, v ge = 10v C 1320 C nc emitter-collector voltage* v ec i e = 350a, v ge = 0v C C 2.0 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies CC99nf output capacitance c oes v ce = 10v, v ge = 0v C C 4.5 nf reverse transfer capacitance c res C C 3.4 nf resistive turn-on delay time t d(on) v cc = 100v, i c = 350a, C C 1100 ns load rise time t r v ge1 = v ge2 = 10v, C C 2400 ns switching turn-off delay time t d(off) r g = 7.1 w , resistive C C 900 ns times fall time t f load switching operation C C 500 ns diode reverse recovery time t rr i e = 350a, di e /dt = -700a/ m s C C 300 ns diode reverse recovery charge q rr i e = 350a, di e /dt = -700a/ m s C 5.7 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.17 c/w thermal resistance, junction to case r th(j-c) per free-wheel diode C C 0.28 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.010 C c/w mitsubishi igbt modules CM350DU-5F high power switching use insulated type
sep.2000 mitsubishi igbt modules CM350DU-5F high power switching use insulated type emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr di/dt = -700a/ m sec t j = 25 c 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) collector current, i c , (amperes) 10 4 10 1 10 2 10 3 10 3 10 2 10 1 t d(off) t r v cc = 100v v ge = 10v r g = 7.1 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) t d(on) collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 3 6 9 12 15 4 3 2 1 0 t j = 25 c i c = 140a i c = 700a i c = 350a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 012345 420 140 0 v ge = 15v 10 5.5 4.5 t j = 25 o c 280 560 700 5.0 4.75 5.25 5.75 6 8 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 0246810 560 420 280 140 0 700 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 2.0 0 140 280 420 560 1.6 1.2 0.8 0.4 0 700 v ge = 10v t j = 25 c t j = 125 c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 0.7 1.4 16 12 8 4 0 2.1 2.8 v cc = 100v v cc = 50v i c = 350a 10 1 10 2 2 3 5 7 2 3 5 7 0.6 0.8 1.0 1.4 1.2 1.6 1.8 7 t j = 25 c
sep.2000 mitsubishi igbt modules CM350DU-5F high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 single pulse t c = 25 c per unit base = r th(j-c) = 0.28 c/w z th = r th ?(normalized value) time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.17 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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